| PART |
Description |
Maker |
| 2SC5338-15 |
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD
|
Renesas Electronics Corporation
|
| NESG270034-AZ NESG270034-T1-AZ |
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (2 W) 3-PIN POWER MINIMOLD (34 PKG) npn型硅锗射频晶体管输出功率放大介质 - Pin电源MINIMOLD34 PKG）的
|
California Eastern Laboratories, Inc.
|
| NESG220034 NESG220034-T1 |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
|
Renesas Electronics Corporation
|
| UPA901TU |
NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD
|
CEL
|
| UPA901TU-T3-A UPA901TU UPA901TU-A UPA901TU-T3 |
NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD
|
NEC[NEC]
|
| UPA863TD-A UPA863TD-T3-A |
NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD
NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD
|
California Eastern Labs
|
| NE3508M04-T2-A |
S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET LEAD FREE, SUPER MINIMOLD, M04, 4 PIN
|
California Eastern Laboratories, Inc.
|
| 2SC5606 2SC5606-T1 |
NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
|
NEC
|
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| NEC66219 2SC5606-T1-A 2SC5606-A |
NPN SILICON RF TRANSISTOR FOR LOW NOISE ・ HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
|
California Eastern Labs
|
| UPA814TC UPA814TC-T1 NECCORP.-PA814TC |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
|
NEC Corp.
|
| NESG2031M16-T3 NESG2031M16-T3-A NESG2031M16 NESG20 |
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
