PART |
Description |
Maker |
MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola) MOTOROLA[Motorola, Inc]
|
AN26102A AN26102A-14 |
SiGe Linear Power Amplifier for 2.4 GHz Band Applications SiGe Bi-CMOS Monolithic IC, WLCSP PKG Power Amplifi er
|
Panasonic Battery Group
|
ITT2110AH |
3.5V 3.3W RF Power Amplifier IC for GSM
|
M/A-COM / Tyco Electronics
|
RF5110G |
3V GSM POWER AMPLIFIER 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
RF Micro Devices, Inc.
|
PBL40310 |
3.5 V GSM 900 MHz Power Amplifier
|
ERICSSON[Ericsson]
|
CGY2014 CGY2014ATW |
GSM/DCS/PCS power amplifier
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
AWT6172RM33P8 AWT6172RM33P9 AWT6172HM33P8 AWT6172H |
GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
HA31005ANP HA31005ANPTL-E |
SiGe MMIC High Frequency Power Amplifier
|
Renesas Electronics Corporation
|
PF01412A PF01412 |
IC,RF AMPLIFIER,HYBRID,MODULE,8PIN,PLASTIC From old datasheet system MOS FET Power Amplifier Module for E-GSM Handy Phone
|
Hitachi America HITACHI[Hitachi Semiconductor]
|
HMC481ST8910 HMC481ST89E |
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 5 GHz 0 MHz - 5000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Hittite Microwave Corporation
|
HSG2005 HSG2005TB-E |
SiGe HBT High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation
|