| PART |
Description |
Maker |
| RM400HV-34S |
CAP CER 22000PF 10% 50V X8R 0805
HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RM25HG-24S RM25HG-24S01 |
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE HIGH SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| CTZ3.0 CTZ2.6 CTZ2.7 CTZ2.X CTZ15 |
(CTZ2.6 - CTZ47) HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
(CTZxx) HIGH SPEED SILICON SWITCHING DIODE AXIAL LEAD
|
CDIL
|
| SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE
Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| BAS21U BAS21 BAS21-03W |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| HSU226 |
Diodes>Switching
Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
| GDMBD2004 |
The GDMBD2004 is designed for ultra high speed switching
SURFACE MOUNT,SWITCHING DIODE
|
E-Tech Electronics LTD
GTM CORPORATION
|
| Q62702-A1030 BAV70W |
From old datasheet system
SILICON SWITCHING DIODE ARRAY (FOR HIGH SPEED SWITCHING APPLICATIONS COMMON CATHODE)
|
Siemens Semiconductor Group
SIEMENS AG
|
| RD0106T-H RD0106T-TL-H RD0106T12 |
Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode
|
Sanyo Semicon Device
|
| CMDD4448 |
SUPERminiTM HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
