PART |
Description |
Maker |
UG42S6442HSG UG42S6442HSG-PL UG42S6442HSG-PH |
16M BYTES (2M X 64 BITS) PC100 SDRAM UNBUFFERED SODIMM
|
List of Unclassifed Manufacturers ETC
|
V436416S04V |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
V437216S04VCTG-10PC |
3.3 VOLT 16M x 72 HIGH PERFORMANCE PC100 UNBUFFERED ECC SDRAM MODULE
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp]
|
GMM2649233EFTG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
V436416S04VTG |
3.3 Volt 16M x 64 High Performance PC100 and 100 MHZ SDRAM Module with Unbuffered(3.3V 16M*64位高性能无缓冲器PC10000MHZSDRAM模块) 3.3伏特16米x 64高性能00兆赫PC100的内存模块,缓冲.3 1,600 * 64位高性能无缓冲器PC100的和100MHZSDRAM模块
|
Mosel Vitelic, Corp.
|
HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3 256Mb (32M x 8) PC133 3-3-3 256Mb (32M x 8) PC100 2-2-2 56Mb的(32M的8)PC100-2-2 x16 SDRAM x16内存
|
Toshiba, Corp. SIEMENS AG
|
M470L2923BN0-CA2 M470L6524BTU0-CLCC M470L2923BN0-C |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
KMM374S403CT |
PC100 SDRAM MODULE
|
Samsung semiconductor
|
NT256D64S88A2GM NT256D64S88A2GM-7K NT256D64S88A2GM |
256Mb: 32Mx64 unbuffered DDR SO-DIMM module based 32Mx8 SDRAM 200pin One Bank Unbuffered DDR SO-DIMM 200pin一个银行缓冲的DDR SO - DIMM插槽
|
NANYA ETC Electronic Theatre Controls, Inc.
|