| PART |
Description |
Maker |
| D10SC9M |
Schottky Rectifiers (SBD) (90V 10A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| SB200-09 |
90V/ 20A Rectifier
90V, 20A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
SANYO[Sanyo Semicon Device]
|
| SB02-09CP |
90V, 200mA Rectifier Shottky Barrier Diode
Small signal(single type)
90V/ 200mA Rectifier
|
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| SB005-09CP SB005-09CP-E |
90V, 50mA Rectifier
Schottky Barrier Diode
DIODE SCHOTTKY 90V 0.05A 3CP
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Sanyo Semiconductor
|
| SBA100-04J |
40V/ 10A Rectifier
40V 10A Rectifier
Schottky Barrier Diode (Twin Type Cathode Common) 40V, 10A Rectifier
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| SBE803 |
90V/ 200mA Rectifier
90V, 200mA Rectifier
|
SANYO[Sanyo Semicon Device]
|
| SBA50-09J |
90V, 5A Rectifier(用于高频整流应用的重复反向电0V，平均整流电5A 整流
|
Sanyo Electric Co.,Ltd.
|
| BTA10-600B BTA10-600BW BTA10-600C BTA10-600CW BTA1 |
10A triac, 600V
Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:22-55
10A TRIACS 10A条双向可控硅
10A triac, 800V
|
SGS Thomson Microelectronics
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| SB250-09R |
90V, 25A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
SANYO[Sanyo Semicon Device]
|
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82
晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 180V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 140伏特五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 50V五（巴西）总裁| 6A条一c）|2
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五（巴西）总裁|甲一（c）| STR-5/16
|
Samsung Semiconductor Co., Ltd.
Molex, Inc.
Intel, Corp.
|
