| PART |
Description |
Maker |
| FQE10N20LC FQE10N20LCTU |
200V N-Channel Advance Q-FET C-Series
200V Logic N-Channel MOSFET 4 A, 200 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-126
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRFB42N20D |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=200V/ Rds(on)max=0.055ohm/ Id=44A)
|
International Rectifier
|
| IRFD9210 |
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A)
|
International Rectifier
|
| FQU5P20 FQD5P20 FQD5P20TM |
200V P-Channel QFET
200V P-Channel MOSFET 3.7 A, 200 V, 1.4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRF9610S IRF9610STRL IRF9610STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)
Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A)
CAP 3.9PF 50V /-0.1PF C0G SMD-0402 TR-7-PA SN100 HIGH-FREQ 功率MOSFET（减振钢板基本\u003d-00V，的Rds（on）\u003d 3.0ohm，身份证\u003d- 1.8A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF9610 |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)
Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A)
|
IRF[International Rectifier]
|
| FQT4N20L FQT4N20LTF |
200V N-Channel Logic Level QFET
200V LOGIC N-Channel MOSFET 0.85 A, 200 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| AM29CPL154H-25DC AM29CPL154H-25/BXA AM29CPL154H-25 |
User Programmable Special Function ASIC
200V Single N-Channel Hi-Rel MOSFET in a TO-254AA package; A JANTX2N7219 with Standard Packaging
100V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package; A JANTX2N6788U with Standard Packaging
200V Single N-Channel Hi-Rel MOSFET in a TO-259AA package; A IRFI260 with Standard Packaging
800V Single N-Channel Hi-Rel MOSFET in a TO-204AA package; A IRFAE40 with Standard Packaging
-55V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package; A IRF5NJ5305 with Standard Packaging
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package; A IRFF9110 with Standard Packaging
400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRFN340 with Standard Packaging
1000V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRFNG50 with Standard Packaging
-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA package; A JANTXV2N7237 with Standard Packaging
-200V Single P-Channel Hi-Rel MOSFET in a TO-254AA package; A JANS2N7237 with Standard Packaging
40V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRL7N1404 with Standard Packaging 用户可编程ASIC的特殊功
|
Advanced Micro Devices, Inc.
|
| OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道，功率MOS场效应管) 00V安培，N沟道功率MOSFET（为200V9A条，沟道，功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
| IRHNA597260 2129 IRHNA593260 IRHNA597260PBF |
-200V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
-200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-2 package
From old datasheet system
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
35.5 A, 200 V, 0.11 ohm, P-CHANNEL, Si, POWER, MOSFET
|
IRF[International Rectifier]
|
| IRF640NS IRF640NSPBF IRF640NSTRL IRF640NPBF IRF640 |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
International Rectifier
|
