| PART |
Description |
Maker |
| 2SD1068 |
TENTATIVE
|
SONY[Sony Corporation]
|
| FCB20N60F12 |
600V N-Channe MOSFET 600V, 20A, 190mΩ
|
Fairchild Semiconductor
|
| P0430WQLB-T |
Tentative Product Specification
|
AZ Displays
|
| G121X1-L03 |
TFT LCD Tentative Specification
|
AZ Displays
|
| G104X1-L03 |
TFT LCD Tentative Specification
|
AZ Displays
http://
|
| 2SC5363TENTATIVE |
2SC5363(Tentative) - NPN Transistor
|
Matsshita / Panasonic
|
| 2SA493 |
SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS)(TENTATIVE)
|
Unknow
|
| TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TAN-326 |
Tentative Data Audio IC Application Circuit Example of 3-V FM Radio Circuit TA2111FN TC9418FN Compact Module
|
TOSHIBA
|
| TC55VCM216ASTN40 TC55VCM216ASTN55 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SD2258 2SD2258TENTATIVE |
2SD2258 (Tentative) - Silicon NPN epitaxial planer type
Silicon NPN epitaxial planer type(For low-frequency output amplification)
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| 2SK3031TENTATIVE 2SK30ATMR 2SK30ATMGR |
2SK3031 (Tentative) - N-Channel Power F-MOS FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 300UA我（直）|92
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 2.6MA我（直）|2
|
KEMET, Corp.
Electronic Theatre Controls, Inc.
|
