| PART |
Description |
Maker |
| CXK77B3640GB |
4Mb Late Write HSTL High Speed Synchronous SRAM (128K x 36Bit)(4M位、写延迟、高速逻辑收发（HSTL）、高速同步静态RAM (128K x 36) 4Mb的后写入HSTL高速同步SRAM28K的x 36Bit）（4分位，写延迟，高速逻辑收发（HSTL），高速同步静态随机存储器28K的36位）
|
Sony, Corp.
|
| CXK77B1841GB |
4Mb Late Write LVTTL High Speed Synchronous SRAM (256K x 18Bit)(4M位、写延迟LVTTL高速同步静态RAM (256K x 18) 4Mb的后写入LVTTL高速同步SRAM56 × 18位）分位，写延迟LVTTL高速同步静态随机存储器56 × 18位）
|
Sony, Corp.
|
| MCM69L818AZP9.5R MCM69L736A MCM69L736AZP10.5 MCM69 |
4M Late Write HSTL
|
MOTOROLA[Motorola, Inc]
|
| MCM69R736AZP5 MCM69R736AZP5R MCM69R736AZP8 MCM69R7 |
4M Late Write HSTL 128K X 36 LATE-WRITE SRAM, 4 ns, PBGA119
Circular Connector; No. of Contacts:22; Series:; Body Material:Aluminum Alloy; Connecting Termination:Solder; Connector Shell Size:36; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:36-1 RoHS Compliant: No
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| MCM63R736 |
4M Late Write HSTL
From old datasheet system
|
Motorola
|
| UPD44323362F1-C40-FJ1 UPD44323362 |
32M-BIT CMOS SYNCHRONOUS FAST STATIC RAM 1M-WORD BY 36-BIT HSTL INTERFACE / REGISTER-REGISTER / LATE WRITE
|
NEC[NEC]
|
| GS8170DW36C GS8170DW36C-200 GS8170DW36C-250 GS8170 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM
18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 2.25 ns, PBGA209
|
GSI Technology, Inc.
|
| MCM69R737AZP7 MCM69R737AZP6R MCM69R737AZP5R MCM69R |
From old datasheet system
4M Late Write LVTTL
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| MCM69R536ZP4.4R |
32K X 36 LATE-WRITE SRAM, 2.2 ns, PBGA119
|
MOTOROLA INC
|
| GS8170DW36AC-250 GS8170DW36AC-333 GS8170DW36AGC-25 |
18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
|
GSI[GSI Technology]
|
| HM64YGB36100BP-33 HM64YGB36100 |
32M Synchronous Late Write Fast Static RAM (1-Mword 】 36-bit)
|
Renesas Electronics Corporation
|
