| PART |
Description |
Maker |
| M5M51008CFP M5M51008CKR-55 M5M51008CKR-55X M5M5100 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静态RAM
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位（131072 - Word位）的CMOS静RAM
Octal D-Type Transparent Latches With 3-State Outputs 20-SSOP -40 to 85
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| HN28F101SERIES 28F101 |
131072-word ′ 8-bit CMOS Flash Memory
From old datasheet system
|
hitachi
|
| HN27C101ATT |
131072-word 5 8-bit CMOS One Time Electrically Programmable ROM
|
Renesas Technology / Hitachi Semiconductor
|
| HM62V8128LT-12 HM62V8128LT-12L HM62V8128LT-15 HM62 |
131072-Word x 8-Bit Speed CMOS Static RAM 131072字8位高速CMOS静态RAM
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| CXK5B81020JM-12 CXK5B81020J/TM-12 |
131072-word x 8-bit High Speed Bi-CMOS Static RAM
131072-word 8-bit High Speed Bi-CMOS Static RAM
|
Sony Corporation
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
| TC55V1001F TC55V1001F-10 TC55V1001F-85 TC55V1001FT |
131,072 WORD BY 8 BIT STATIC RAM 131072 Word8位静态RAM
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
