| PART |
Description |
Maker |
| FFH50US60S |
50A, 600V StealthDiode 50 A, 600 V, SILICON, RECTIFIER DIODE, TO-247
50A, 600V Stealth⑩ Diode
50A, 600V Stealth Diode
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| STGE50NB60HD 6704 |
N-CHANNEL 50A - 600V ISOTOP PowerMESH TM IGBT
From old datasheet system
N-CHANNEL 50A - 600V ISOTOP PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STGW50NB60H |
N-CHANNEL 50A - 600V TO-247 POWERMESH IGBT
|
ST Microelectronics
|
| STGE50NC60WD |
N-channel 50A - 600V - ISOTOP Ultra fast switching PowerMESHTM IGBT
|
STMicroelectronics
|
| RURU5060 FN2940 |
50A/ 600V Ultrafast Diode
50A, 600V Ultrafast Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| RHRG5060 FN3920 |
50A/ 600V Hyperfast Diode
50A, 600V Hyperfast Diode
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| STY80NM60N |
N-channel 600 V - 0.035 Ω - 80 A - Max247 second generation MDmesh Power MOSFET
N-channel 600 V - 0.035 ヘ - 80 A - Max247 second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| SSG50C120 SSG50C60 SSG50C100 SSG50C40 |
TRIAC|1.2KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|600V V(DRM)|50A I(T)RMS|TO-208VARM8 可控硅| 600V的五（DRM）的| 50A条口（T）的有效值|08VARM8
TRIAC|1KV V(DRM)|50A I(T)RMS|TO-208VARM8
TRIAC|400V V(DRM)|50A I(T)RMS|TO-208VARM8
|
|
| STY34NB50F |
N - CHANNEL 500V - 0.11Ohm - 34 A - Max247 PowerMESH MOSFET
|
SGS Thomson Microelectronics
|
| 6MBP50RA06 6MBP50RA060 |
IGBT-IPM(600V/50A)
|
FUJI[Fuji Electric]
|
| PRHMB50A6A |
IGBT MODULE Chopper 50A 600V
|
NIEC[Nihon Inter Electronics Corporation]
|
