PART |
Description |
Maker |
BBY58-03W Q62702-B912 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
Q62702-B916 BBY58-02W BBY5802W |
From old datasheet system Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
Siemens Group SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
BBY55-02W BBY5502W Q62702-B0913 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 硅调谐二极管(极好的线性高Q hyperabrupt调谐二极管低串联电感 From old datasheet system
|
SIEMENS AG Siemens Group Infineon SIEMENS[Siemens Semiconductor Group]
|
BB837 BB857 |
Varactordiodes - Silicon tuning diode for SAT tuning units
|
INFINEON[Infineon Technologies AG]
|
BBY66 BBY66-05W BBY66-02V BBY66-05 |
Silicon Tuning Diodes 硅调谐二极管 Varactordiodes - Silicon high Q hyperabrupt tuning diode for VCO applications Varactordiodes - Silicon high Q hyperabrupt tuning diode for VCO applications
|
INFINEON[Infineon Technologies AG]
|
MMVL809T1 MMVL809T1G |
UHF BAND, 5.3 pF, 20 V, SILICON, VARIABLE CAPACITANCE DIODE PLASTIC, CASE 477-02, 2 PIN Silicon Tuning Diode
|
ONSEMI[ON Semiconductor]
|
MMVL109T1 MMVL109T1G |
Tuning Diode SOD323 30V VHF BAND, 29 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE Silicon Epicap Diodes
|
ONSEMI[ON Semiconductor]
|
KDV262E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
|
KEC(Korea Electronics)
|
KDV269E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
|
KEC(Korea Electronics)
|
KDV1484E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE AUDIO SIGNAL TUNING
|
KEC(Korea Electronics)
|
SVC203C09 |
Diffused Junction Type Silicon Diode Varactor Diode for FM Low-Voltage Electronic Tuning Use
|
Sanyo Semicon Device
|