| PART |
Description |
Maker |
| AS7C3256A-8 AS7C3256A-8TCN AS7C3256A-8JC AS7C3256A |
SRAM - 3.3V Fast Asynchronous
3.3V 32K X 8 CMOS SRAM (Common I/O) 32K X 8 STANDARD SRAM, 8 ns, PDSO28
Dual 4-Input Positive-AND Gate 14-SSOP -40 to 85 32K X 8 STANDARD SRAM, 8 ns, PDSO28
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| UPD4382322GF-A67 UPD4382362GF-A67 UPD4382162GF-A75 |
x32 Fast Synchronous SRAM
x16 Fast Synchronous SRAM
x18 Fast Synchronous SRAM
x36 Fast Synchronous SRAM x36快速同步SRAM
|
Lumex, Inc.
|
| AS7C1026B AS7C1026B-20TIN AS7C1026B-10JC AS7C1026B |
High Speed CMOS Logic Triple 3-Input AND Gates 14-SOIC -55 to 125 64K X 16 STANDARD SRAM, 20 ns, PDSO44
5 V 64K X 16 CMOS SRAM 54K的16 CMOS SRAM
5 V 64K X 16 CMOS SRAM 64K X 16 STANDARD SRAM, 12 ns, PDSO44
5 V 64K X 16 CMOS SRAM 64K X 16 STANDARD SRAM, 20 ns, PDSO44
5 V 64K X 16 CMOS SRAM 64K X 16 STANDARD SRAM, 10 ns, PDSO44
High Speed CMOS Logic Dual Positive-Edge-Triggered J-K Flip-Flops with Set and Reset 16-PDIP -55 to 125
High Speed CMOS Logic Triple 3-Input AND Gates 14-PDIP -55 to 125
High Speed CMOS Logic Dual Positive-Edge-Triggered J-K Flip-Flops with Set and Reset 16-SOIC -55 to 125
SRAM - 5V Fast Asynchronous
|
Analog Devices, Inc.
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| HY63V8400 |
512Kx8Bit CMOS FAST SRAM
|
Hynix Semiconductor Inc.
|
| PDM44028 |
64K x 18-Bit Fast CMOS SRAM
|
Paradigm Technology
|
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP |
Memory>Fast SRAM>QDR SRAM
36-Mbit QDRTMII SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| HM66AQB18204BP-33 HM66AQB36104BP-40 HM66AQB9404BP- |
Memory>Fast SRAM>QDR SRAM
36-Mbit QDRTMII SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| HM66AEB18202 HM66AEB36102BP-40 HM66AEB18202BP-30 H |
Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
| R1RW0404DGE-2PR R1RW0404D R1RW0404DGE-2LR REJ03C01 |
Memory>Fast SRAM>Asynchronous SRAM
4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
|
RENESAS[Renesas Electronics Corporation]
|
| V62C3801024L-100T V62C3801024LL-85V V62C3801024L V |
High Temp Tested PC357N5TJ00F
Ultra Low Power 128K x 8 CMOS SRAM 128K的超低功耗8 CMOS SRAM
|
MOSEL[Mosel Vitelic Corp]
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic, Corp.
|
| HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM6 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (512-kword x 8-bit)
BOX 5.0X1.85X1.0 W/CLP BLK
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
