| PART |
Description |
Maker |
| IDT71V256SA |
Lower Power 3.3V CMOS Fast SRAM
|
IDT
|
| AP2606AGY-HF AP2606AGY-HF-14 |
Fast Switching Characteristic, Lower Gate Charge
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| AP6677GH AP6677GH14 |
Lower On-resistance, Simple Drive Requirement, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
| AP9620AGM-HF AP9620AGM-HF-14 |
Capable of 2.5V Gate Drive, Lower On-resistance
Fast Switching Characteristic
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| AP60T06GJ-HF AP60T06GJ-HF-14 |
Simple Drive Requirement, Lower On-resistance, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
Advanced Power Electron...
|
| AP60T06GP-HF |
Simple Drive Requirement, Lower On-resistance, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
| SGB06N60 SGB06N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB02N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| AP9998GI-HF |
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic
|
Advanced Power Electronics Corp.
|
| SGP02N12007 SGP02N120 SGD02N120 SGI02N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| AP2311GK-HF AP2311GK-HF-14 |
Simple Drive Requirement, Lower Gate Charge, Fast Switching Characteristic
|
Advanced Power Electronics Corp.
Advanced Power Electronics ...
|
| K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
