PART |
Description |
Maker |
6F80 12F 12F10 12F100 12F100B 12F10B 12F120 12F120 |
V(rrm): 1200V; 12A diffused silicon rectifier diode. For general pusposes: for battery chargers, converters, power supplies, machine tool controls 6,12 and 16 Amp Diffused Silicon Rectifier Diodes
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IRF[International Rectifier]
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BU2520DW |
Silicon Diffused Power Transistor(纭???e?????朵?绠? Silicon Diffused Power Transistor(硅扩散功率型晶体 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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BDY28 185T2 183T2 BDY27 184T2 BDY26 185T2C |
250V NPN silicon transistot, diffused mesa 200V NPN silicon transistot, diffused mesa TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 6A I(C) | TO-3 晶体管|晶体管|叩| 250V五(巴西)总裁| 6A条一(c)|3 NPN SILICON TRANSISTORS DIFFUSED MESA 180V NPN silicon transistot, diffused mesa
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Cypress Semiconductor, Corp. List of Unclassifed Manufacturers ETC[ETC] Comset Semiconductors
|
2SC2429 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT From old datasheet system SILICON HIGH SPPED POWER TRANSISTORS 高硅SPPED功率晶体
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Fujitsu Component Limited. Fujitsu Microelectronics Fujitsu Media Devices Limited Toshiba Semiconductor Fujitsu Limited Fujitsu, Ltd.
|
2SC2073A01 2SC2073A |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
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TOSHIBA[Toshiba Semiconductor]
|
BU603 |
Silicon Diffused Power Transistors
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Philips Semiconductors
|
BU2506DX |
Silicon Diffused Power Transistor
|
Philips
|
BU506DF BU506F |
Silicon diffused power transistors
|
PHILIPS[Philips Semiconductors]
|
BUT211X |
Silicon Diffused Power Transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BUJ302A BUJ302 |
Silicon Diffused Power Transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
BUT11AI |
Silicon Diffused Power Transistor
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|