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MGP7N60ED - IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS From old datasheet system Insulated Gate Bipolar Transistor

MGP7N60ED_287521.PDF Datasheet


 Full text search : IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS From old datasheet system Insulated Gate Bipolar Transistor
 Product Description search : IGBT & DIODE IN TO-220 7.0 A @ 90 10 A @ 25 600 VOLTS From old datasheet system Insulated Gate Bipolar Transistor


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