| PART |
Description |
Maker |
| 1SS384 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS396 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| BUP314D Q67040-A4226-A2 |
From old datasheet system
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
|
Siemens Semiconductor Group
SIEMENS AG
|
| BUP200D Q67040-A4420-A2 BUP200-D |
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free) 3.6 A, 1200 V, N-CHANNEL IGBT, TO-220AB
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-SOIC -55 to 125 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流闭锁免费
From old datasheet system
IGBT Duopack (IGBT with Antiparallel ...
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| KDR377 |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| KDR729 |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC Holdings
KEC(Korea Electronics)
|
| 1SS319 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching
|
TOSHIBA
|
| 1SS322 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching
|
TOSHIBA
|
| HRB0103A |
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching Rectifying
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying
|
HITACHI[Hitachi Semiconductor]
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| BAP63-03 |
High speed switching for RF signals Low diode capacitance Low diode forward resistance
|
TY Semiconductor Co., Ltd
|
