| PART |
Description |
Maker |
| IRHLUB7930Z4 IRHLUB7970Z410 JANSR2N7626UB |
RADIATION HARDENED
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (UB)
|
International Rectifier
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IRHM93130 IRHM9130 IRHM9130-15 |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
RADIATION HARDENED POWER MOSFET / 100V, P-CHANNEL
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
|
IRF[International Rectifier]
|
| FSYC260R4 FSYC260D FSYC260D1 FSYC260D3 FSYC260R FS |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 46 A, 200 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HCTS365MS HCTS365D HCTS365DMSR HCTS365HMSR HCTS365 |
Radiation Hardened Octal D-Type Flip-Flop/ Three-State/ Positive Edge Triggered
Radiation Hardened Hex Buffer/Line Driver Non-Inverting 辐射硬化六角缓冲线路驱动器非反相
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| ISR2800DESRH ISR2800DHURH ISR2800DHDRH ISR2805DHDR |
2-OUTPUT 2.5 W DC-DC REG PWR SUPPLY MODULE
Adj, Radiation hardened high-power, high efficiency DC-DC power converter
5V, Radiation hardened high-power, high efficiency DC-DC power converter
|
MS KENNEDY CORP
M.S. Kennedy Corp.
|
| JANSR2N7408 FN4637 |
Quadruple 2-Input Positive-NAND Gates 14-VQFN -40 to 85
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant,N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC916 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
From old datasheet system
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPL230D1 FSPL230F FSPL230F3 FSPL230F4 FSPL230R4 F |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| SM602HRR SM600HRR SM612 SM600 SM610 SM612R SM600R |
(SM600 - SM612) SWITCHING REGULATOR POWER OUTPUT STAGES
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS SPECIALTY ANALOG CIRCUIT, MBCY4
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效，5安培开关稳压器
|
MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
http://
|
| IRHNA7264SE |
250V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-2 package
RADIATION HARDENED POWER MOSFET
|
International Rectifier
|
