| PART |
Description |
Maker |
| MRF9002R2 |
MRF9002R2 1.0 GHz, 2 W, 26 V Lateral N-Channel Broadband RF Power MOSFET
RF Power Field Effect Transistor Array
|
Motorola, Inc
|
| MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3 |
MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc]
|
| TGA6316 TGA6316-EEU |
6 - 17 GHz Dual-Channel Power Amplifier
|
TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
|
| MRF19030SR3 MRF19030R3 |
2.0 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| MRF18085A MRF18085AR3 MRF18085ALSR3 |
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
MRF18085A, MRF18085AR3, MRF18085ALSR3 GSM/GSM EDGE, 1.8-1.88 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
http://
MOTOROLA[Motorola, Inc]
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| CFS0103-SB08 CFS0103-SB-0G00 |
0.1-10.0 GHz Low Noise, Medium Power
X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
|
MIMIX BROADBAND INC
|
| SA1056 |
CDMA 1.5-Watt 1.93 GHz to 1.99 GHz Linear Power Amplifier Module
|
ETC[ETC]
|
| AWB7128 AWB7128P8 |
2.545 GHz through 2.69 GHz Small-Cell Power Amplifier Module
|
ANADIGICS, Inc
|
| AWB7123HM41P8 |
1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module
|
ANADIGICS, Inc
|
