PART |
Description |
Maker |
UPB1502GR UPB1502GR1 UPB1502GR1-E1 UPB1502GR-E1 |
1.7 GHz/ 2.0 GHz LOW-POWER TWO-MODULUS PRESCALER DIVIDED-BY-64/65, 128/129 1.7千兆 2.0 GHz的低功耗双分频DIVIDED-BY-64/65,一百二十九分之一百二十八 1.7 GHz/ 2.0 GHz Low-Power Two-Modulus Prescaler(1.7GHz 2.0GHz 定标
|
NEC, Corp. NEC Corp.
|
RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大 5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER Single-band power amplifiers The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc]
|
ZL40000LCE ZL40000 |
3/6 Channel DC to 2 GHz Power Splitter
|
ZARLINK[Zarlink Semiconductor Inc]
|
MRF19030SR3 MRF19030R3 |
2.0 GHz, 30 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
MRF18030BR3 MRF18030BSR3 MRF1803BR3 MRF1803BSR3 MR |
MRF18030BR3, MRF18030BSR3 GSM/GSM EDGE 1.93 - 1.99 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS
|
Motorola, Inc
|
AGR21125E AGR21125EF AGR21125EU |
125 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
AGR21180EF |
180 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
AGR21060E AGR21060EF AGR21060EU |
60 W, 2.110 GHz-2.170 GHz, N-Channel E-Mode, Lateral MOSFET
|
TriQuint Semiconductor
|
CFH2162-P509 |
2.3 to 2.5 GHz S BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband MIMIX BROADBAND INC
|
RMPA61800 |
Dual Channel 6-18 GHz 2 Watt Power Amplifier MMIC
|
RAYTHEON[Raytheon Company]
|
87310B 87300C 87300D 87301B 87300B 87301D 87301C 8 |
87310B Coaxial Hybrid Coupler, 90 Degree, 1 GHz to 18 GHz 87300C Coaxial Directional Coupler, 1 GHz to 26.5 GHz 87300D Coaxial Directional Coupler, 6 to 26.5 GHz 87301B Coaxial Directional Coupler, 10 to 46 GHz 87300B Coaxial Directional Coupler, 1 GHz to 20 GHz 87301D Coaxial Directional Coupler, 1 GHz to 40 GHz 87301C Coaxial Directional Coupler, 10 to 50 GHz 87301E Coaxial Directional Coupler, 2 GHz to 50 GHz
|
Agilent (Hewlett-Packard)
|
Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|