PART |
Description |
Maker |
2SA1312 E000505 |
From old datasheet system AUDIO FREQUENCY LOW NOISE AMPLIDIER APPLICATIONS TRANSISTOR (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
2SA1316 |
TRANSISTOR (FOR LOW NOISE AUDIO AMPLIFIER/ RECOMMENDED FOR THE FIRST STAGES OF MC GEAD AMPLIFIERS) TRANSISTOR (FOR LOW NOISE AUDIO AMPLIFIER, RECOMMENDED FOR THE FIRST STAGES OF MC GEAD AMPLIFIERS) FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS
|
SMSC, Corp. TOSHIBA[Toshiba Semiconductor]
|
2SA970 E000607 |
From old datasheet system TRANSISTOR (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
2SC2240 |
Transistor Silicon NPN Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications
|
TOSHIBA
|
2SK370 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
TOSHIBA
|
BC107 BC108 3298 BC109 BC10. |
From old datasheet system LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS NPN SILICON PLANAR EPITAXIAL TRANSISTOR
|
STMicroelectronics ST Microelectronics Micro Electronics
|
2SC3324 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications
|
TOSHIBA
|
2SC4703 2SC4703NE46234 2SC4703SH |
MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MICROWAVE LOW NOISE LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MICROWAVE LOW NOISE/ LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits BJT
|
NEC[NEC] NEC Corp.
|
2SJ109 E001254 |
P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER/ DIFFERENTIAL AMPLIFIER APPLICATIONS) P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER, DIFFERENTIAL AMPLIFIER APPLICATIONS) LOW NOISE AUDIO AMPLIFIER APPLICATIONS DIFFERENTIAL AMPLIFIER APPLICATIONS From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
CMUT5087E CMUT5088E |
SMD Small Signal Transistor NPN Low Noise SMD Small Signal Transistor PNP Low Noise ENHANCED SPECIFICATION SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSISTORS
|
CENTRAL[Central Semiconductor Corp]
|
BFP520 Q62702-F1794 Q62702-F1491 |
NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA) NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|