| PART |
Description |
Maker |
| LN51L LN51F |
GaAs Infrared Light Emitting Diodes
|
PANASONIC[Panasonic Semiconductor]
|
| SIR-568ST3F |
Sensors > Infrared Light Emitting Diodes
|
ROHM
|
| LN175 0868 |
Infrared Light Emitting Diodes
From old datasheet system
|
Matsshita / Panasonic
|
| LN69 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
|
Panasonic
|
| LN66NCLN66NC LN66NC |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
|
Panasonic
|
| LN78 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
|
Panasonic
|
| LN68 |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
|
Panasonic
|
| MIE-546A2U 546A2U |
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 的AlGaAs /砷化镓的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (UL Listed)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-324A4 324A4 |
Infrared Emitting Diodes (IRED)
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-516A2U 516A2U |
Infrared Emitting Diodes (UL Listed)
AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| IS3H4 |
The IS3H4 is an optically coupled isolator consisting of two infrared light emitting diodes in inverse parallel and an NPN silicon photo transistor.
|
ISOCOM COMPONENTS
|
