| PART |
Description |
Maker |
| SKA06N60 |
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode( NPT 技术中的快S-IGBT)
|
SIEMENS AG
|
| SGW20N60 Q67040-S4236 Q67041-A4712-A2 Q67041-A4712 |
Fast S-IGBT in NPT-technology
Fast S-IGBT in NPT-technology 快速的S -不扩散核武器条约IGBT的技
Fast S-IGBT in NPT-technology( NPT ???涓??蹇??S-IGBT)
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
SIEMENS A G
|
| SGD04N60 |
Fast S-IGBT in NPT-technology( NPT 技术中的快S-IGBT) 9.4 A, 600 V, N-CHANNEL IGBT, TO-252AA
|
Infineon Technologies AG
|
| SKB04N60 SKP04N60 |
IGBTs & DuoPacks - 4A 600V TO220AB IGBT Diode
IGBTs & DuoPacks - 4A 600V TO263AB SMD IGBT Diode
Fast IGBT in NPT-technology with soft/ fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
| SGB15N120 |
Fast S-IGBT in NPT-technology( NPT技术中的快S-IGBT) 快速的S -不扩散核武器条约IGBT的技术（不扩散技术中的快速第S - IGBT的）
|
SIEMENS AG
|
| SIGC12T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| SIGC81T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| SGW02N12006 |
Fast IGBT in NPT-technology
|
Infineon Technologies AG
|
| SKB10N60A07 |
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
Infineon Technologies AG
|
| SKP06N60 SKB06N60 Q67040-S4230 Q67040-S4231 |
Fast S-IGBT in NPT-technology with soft fast recovery anti-parallel EmCon diode
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
|
INFINEON[Infineon Technologies AG]
|
| SGP10N60A SGW10N60A SGP10N60A09 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB04N60 SGB04N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
