| PART |
Description |
Maker |
| APT1201R6 APT1201R6B APT1201R6BVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1200V 8A 1.600 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
| APT12060LVR APT12060B2VR |
POWER MOS V 1200V 20A 0.600 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8052BFLL APT8052SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 800V 15A 0.520 Ohm
|
Advanced Power Technology, Ltd.
|
| RHRP15120 |
15A, 1200V Hyperfast Diode
|
Fairchild Semiconductor
|
| CRNA20-800 CRNB20-800 CRNA20-1200 CRNB20-1200 CRNA |
20Amp - 400/600/800/1200V - RECTIFIER 20Amp - 400/600/800/1200V -整流
|
Electronic Theatre Controls, Inc.
|
| APT12045L2VR |
POWER MOS V 1200V 26A 0.450 Ohm
|
Advanced Power Technology
|
| NGTB15N120L |
IGBT 1200V 15A FS1 Gen Mkt
|
ON Semiconductor
|
| RJK4012DPE-12 RJK4012DPE-15 RJK4012DPE-00J3 |
400V - 15A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FGW15N120HD |
Discrete IGBT (High-Speed V series) 1200V / 15A
|
Fuji Electric
|
| SGB15N120 |
IGBTs & DuoPacks - 15A 1200V TO263AB SMD IGBT
|
Infineon
|
