| PART |
Description |
Maker |
| IRGTI050U06 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C)
|
|
| DIM200WHS12-E000 |
Half Bridge IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| BSM150GAL100D BSM150GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1KV交五（巴西）国际消费电子展| 150A一（c
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
|
Infineon Technologies AG
|
| CM100DY24H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一（c
|
Toshiba, Corp.
|
| DIM200PHM33-F00011 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
| GP200MHS12 |
Half Bridge IGBT Module
|
DYNEX[Dynex Semiconductor]
|
| SIM75D12SV1 |
“HALF-BRIDGE IGBT MODULE
“HALF-BRIDGE” IGBT MODULE
|
SemiWell Semiconductor
|
| 50MT060WH 50MT060WHT |
600V Warp 20-100 kHz Half-Bridge IGBT in a MTP package
HALF-BRIDGE IGBT MTP
|
IRF[International Rectifier]
|
| C67070-A2702-A67 BSM75GB170DN2 075B17N2 |
From old datasheet system
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| GA200HS60S |
600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak package 600V的直千赫的廉政（标准）半桥IGBT à - Pak封装
HALF-BRIDGE IGBT INT-A-PAK
|
Ecliptek, Corp.
IRF[International Rectifier]
|
| IR3101 |
BRUSH DC MOTOR CONTROLLER, 1.6 A, PSIP9
Intelligent Power Module. Gate Driver IC integrated with a half bridge FredFET Designed for sub 250W Motor Drive applications in a 9-Lead SIP. RDSon of 1.0 Ohm
Intelligent Power Module.Gate Driver IC integrated with a half bridge FredFET Designed for sub 250
Half-Bridge FredFet and Integrated Driver
RESISTOR 5.6 OHM 35W TO220
|
IRF[International Rectifier]
|
