| PART |
Description |
Maker |
| ATF-10236 ATF-10236-STR ATF-10236-TR1 ATF10236 |
ER 2C 2#16S PIN RECP BOX
0.5?12 GHz Low Noise Gallium Arsenide FET
0.5-12 GHz Low Noise Gallium Arsenide FET
0.512 GHz Low Noise Gallium Arsenide FET
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| DGS20-022A DGSK40-025A DGS20-025A DGSK40-022A |
250V gallium arsenide schottky rectifier
220V gallium arsenide schottky rectifier
|
IXYS[IXYS Corporation]
|
| ATF-45101 |
2-8 GHz Medium Power Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ATF-46101 |
2-10 GHz Medium Power Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| CLE230 CLE231 CLE232 CLE233 |
High Power Aluminum Gallium Arsenide IREDs
|
List of Unclassifed Manufacturers
ETC
Clairex Technologies, Inc
|
| WP7113ID5V13 |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
Kingbright Corporation
|
| PSA08-11EWA |
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
|
KINGBRIGHT[Kingbright Corporation]
|
| CLE320W |
High Power Aluminum Gallium Arsenide 810nm IRED
|
Clairex Technologies, Inc
|
| MRFG35010R1 |
Gallium Arsenide PHEMT RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| GN01067B |
Gallium Arsenide Devices
|
Panasonic
|
| GN01064B |
Gallium Arsenide Devices
|
Panasonic
|
