| PART |
Description |
Maker |
| SD1224-10 2786 1224-10 |
From old datasheet system
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
HF SSB APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
|
| MS1000 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| MS1076 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
Microsemi Corporation
|
| MS1008 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
ADPOW[Advanced Power Technology]
|
| MS1051 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
|
| SD1407 2794 |
From old datasheet system
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
|
STMICROELECTRONICS[STMicroelectronics]
|
| MS1001 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
Bipolar/LDMOS Transistor
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi Corporation
|
| 2SC2290 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
|
TOSHIBA
|
| 2SC2510 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE)
|
TOSHIBA
|
| MS1007 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
HF 2-30 MHz, Class AB, Common Emitter; fO (MHz): 0; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; Vcc (V): 50; ICQ (A): 100; Case Style: M174 HF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
