| PART |
Description |
Maker |
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
| MIG100J7CSB1W |
MINIATURE POWER RELAY 东芝智能功率模块IGBT的硅频道
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MIG100Q6CMB1X |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| C67076-A2515-A67 050D06N2 BSM50GD60DN2 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BSM50GD120DN2 C67076-A2514-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块（功率模相全桥包括快速滑行二极管
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BSM150GT12 BSM150GT120DN2 150T12N2 C67070-A2518-A6 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| APTGF150A120T3AG |
Phase leg NPT IGBT Power Module Power Module
|
Microsemi Corporation
|
| APTGT50H60T3G |
Full - Bridge Trench Field Stop IGBT Power Module 80 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 8A条一（c
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五（巴西）国际消费电子展|5A一（c）|米：HL080HD5.3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五（巴西）国际消费电子展| 75A条一（c
|
Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
|
| APTGT150DH60TG |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 225 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
