PART |
Description |
Maker |
MGFC36V7177A04 |
7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
MGFC39V7177A |
7.1 - 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段8瓦特内部匹配砷化镓场效应
|
Mitsubishi Electric, Corp. Mitsubishi Electric Semiconductor
|
MGFS45V2527A |
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFS45A2527B |
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
EIB1718-1P |
17.7-18.7GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
EIA1819-1P EIB1819-1P |
18.7-19.7GHz, 1W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
MGFC45V5053A C455053A |
5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET From old datasheet system 5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET 5.05-5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
FLM0910-15F |
X BAND, GaAs, N-CHANNEL, RF POWER, JFET X-Band Internally Matched FET
|
Eudyna Devices Inc SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
MGFS48V2527 |
2.5 - 2.7GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFK33V4045 K334045 |
14.0~14.5GHZ BAND 2W INTERNALLY MATCHED GAAS FET From old datasheet system 14.0-14.5GHz BAND 2W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|