PART |
Description |
Maker |
CFB612 |
60.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 1000 hFE. TRANSISTOR | BJT | DARLINGTON | PNP | 120V V(BR)CEO | 6A I(C) | TO-220FP
|
Continental Device India Limited
|
2SB631KF 2SB631KD 2SB631E 2SB631D 2SB631KE 2SB631F |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1A I(C) | TO-126 TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-126 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1A I(C) | TO-126 晶体管|晶体管| npn型| 120伏特五(巴西)总裁| 1A条一(c)|26 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-126 晶体管|晶体管|叩| 100V的五(巴西)总裁| 1A条一(c)|26
|
Riedon, Inc. Sanyo Electric Co., Ltd.
|
2SA0794A 2SA0794 0276 2SA0794/2SA0794A2SA794/2SA79 |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 500MA I(C) | TO-126 晶体管|晶体管|进步党| 100V的五(巴西)总裁| 500mA的一(c)|26 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 500MA I(C) | TO-126 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset From old datasheet system Power Transistors
|
KEMET Corporation Matsshita / Panasonic
|
2SA1425 2SA1425Y |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | SC-71 TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
2SA1358Y 2SA1358 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1A I(C) | TO-126VAR 晶体管|晶体管|进步党| 120伏特五(巴西)总裁| 1A条一(c)|26VAR
|
TOSHIBA
|
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82 晶体管|晶体管|叩| 100V的五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 180V五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管| npn型| 140伏特五(巴西)总裁|甲一c)| STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁| 6A条一c)|2 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一c)| STR-5/16 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五(巴西)总裁|甲一(c)| STR-5/16 TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五(巴西)总裁|甲一(c)| STR-5/16
|
Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
|
ECG396 ECG397 ECG395 ECG471 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 1A I(C) | TO-39 TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 1A I(C) | TO-39 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 50MA I(C) | TO-72 晶体管|晶体管|进步党| 25V的五(巴西)总裁| 50mA的一(c)|2 TRANSISTOR | BJT | NPN | 36V V(BR)CEO | 15A I(C) | SOT-121
|
Cypress Semiconductor, Corp.
|
2N5400RLRP |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 600MA I(C) | TO-92 晶体管|晶体管|进步党| 120伏特五(巴西)总裁| 600毫安一(c)|92
|
Fairchild Semiconductor, Corp.
|
2SB1268S 2SB1268R 2SB1269Q 2SB1135Q 2SB1269S 2SD19 |
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-221VAR 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 5A I(C) | TO-220 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 5A I(C) | TO-220VAR Low-Power, Single/Dual-Level Battery Monitors with Hysteresis 晶体管|晶体管|叩| 50V五(巴西)总裁| 12A条一(c)|20 TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 12A I(C) | TO-220VAR 晶体管|晶体管|进步党| 50V五(巴西)总裁| 12A条一(c)|20VAR
|
Sanyo Electric Co., Ltd.
|