PART |
Description |
Maker |
CD4504BMS FN3336 CD4504BKMSR |
CMOS Hex Voltage Level Shifter for TTL-to-CMOS or CMOS-to-CMOS Operation; Temperature Range: -; Package: 16-FlatPack HEX TTL/CMOS TO CMOS TRANSLATOR, TRUE OUTPUT, CDFP16 From old datasheet system Single, Strobed, High Speed Differential Comparator with Push-Pull Outputs 8-SOIC 0 to 70
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Intersil, Corp. INTERSIL[Intersil Corporation]
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HCMS-2902 HCMS-2903 HCMS-2904 HCMS-2911 HCMS-2912 |
HCMS-2962 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2961 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2964 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2963 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2925 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2924 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2923 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2922 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2921 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2915 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2914 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2913 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2912 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2911 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2905 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2904 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2903 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2902 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2901 · High Performance CMOS 5 x 7 Alphanumeric Displays HCMS-2975-HI000 · High Performance CMOS 5 x 7 Alphanumeric Displays Bipolar Transistor; Collector Emitter Voltage, Vceo:350V; Transistor Polarity:NPN; Power Dissipation:1W; DC Current Gain Min (hfe):40; Collector Current:1A; Package/Case:3-TO-39; DC Current Gain Max (hfe):60; Terminal Type:5 T-PNP-SI-HV AF PWR AMP High Performance CMOS 5 x 7 Alphanumeric Displays 高性能CMOS 5 × 7字母数字显示
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http:// Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)] Vishay Intertechnology, Inc.
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M38037M6-122FP M38037M6-133FP M38037M6-154FP M3803 |
RAM size: 2048bytes single chip 8-bit CMOS microcomputer RAM size: 1536bytes single chip 8-bit CMOS microcomputer RAM size: 768bytes single chip 8-bit CMOS microcomputer SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 3803/04 Group: General Purpose, with Flash RAM size: 256bytes single chip 8-bit CMOS microcomputer RAM size: 640bytes single chip 8-bit CMOS microcomputer RAM size: 896bytes single chip 8-bit CMOS microcomputer RAM size: 512bytes single chip 8-bit CMOS microcomputer RAM size: 384bytes single chip 8-bit CMOS microcomputer RAM size: 1024bytes single chip 8-bit CMOS microcomputer RAM size: 3804bytes single chip 8-bit CMOS microcomputer RAM size: 192bytes single chip 8-bit CMOS microcomputer
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MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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A29002V-100 A29002-70 A29002L-70 A29002V-70 A29002 |
110ns 20mA 256K x 8bit CMOS 5.0V-only 70ns 20mA 256K x 8bit CMOS 5.0V-only 100ns 20mA 256K x 8bit CMOS 5.0V-only 120ns 20mA 256K x 8bit CMOS 5.0V-only 150ns 20mA 256K x 8bit CMOS 5.0V-only 90ns 20mA 256K x 8bit CMOS 5.0V-only 55ns 20mA 256K x 8bit CMOS 5.0V-only
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AMIC Technology
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SM1145BDE SM1145BDS SM1145BDV SM1145BDW SM1145BDX |
CMOS with Enable/ Disable, 3rd Overtone Crystal Used CMOS with Enable/ Disable or Optional Stand By Mode (3.3 V) 2.5 V CMOS Clock Oscillators
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Pletronics, Inc.
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UPD65321 UPD65322 UPD65323 UPD65941GB-XXX-YEU UPD6 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) Channelless type CMOS gate array using 0.35um process
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NEC
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SM1120BDE SM1120BDS SM1120BDV SM1120BDW SM1120BDX |
CMOS with Enable/ Disable, 3rd Overtone Crystal Used CMOS with Enable/ Disable or Optional Stand By Mode (3.3 V) 2.5 V CMOS Clock Oscillators
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Pletronics, Inc.
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IDT7203L20J IDT7203L20JB IDT7204L20J IDT7204L20JB |
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 CMOS ASYNCHRONOUS FIFO 2048 x 9 4096 x 9 8192 x 9 and 16384 x 9 RES,SMD,100,1%,0.063W,0603 High-speed double diode - Cd max.: 1.5 pF; Configuration: dual c.c. ; IF max: 215 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 500 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 80 V Schottky barrier diode - Cd max.: 100@VR=4V pF; Configuration: single ; IF: 1 A; IFSM max: 25 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V CMOS ASYNCHRONOUS FIFO 2048 x 9/ 4096 x 9/ 8192 x 9 and 16384 x 9 Trenchmos (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.34 A; R<sub>DS(on)</sub>: 3900@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 异步FIFO的CMOS 2048 × 9096 × 9192 × 96384 × 9 INSERT, COAX FEMALE STRAIGHTINSERT, COAX FEMALE STRAIGHT; Impedance:50R; Coaxial cable type:RG174AU/RG188AU/RG316AU 16K X 9 OTHER FIFO, 50 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 30 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 异步FIFO的CMOS 2048 × 9096 × 9192 × 96384 × 9 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 16K X 9 OTHER FIFO, 50 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 16K X 9 OTHER FIFO, 50 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 16K X 9 OTHER FIFO, 50 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 20 ns, PQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 8K X 9 OTHER FIFO, 50 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 80 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 80 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 25 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 8K X 9 OTHER FIFO, 20 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 20 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 8K X 9 OTHER FIFO, 50 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 20 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 20 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 65 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 65 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 50 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 50 ns, PQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 25 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 50 ns, PQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 65 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 65 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 65 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 80 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 80 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 80 ns, CDIP28
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IDT[Integrated Device Technology] Integrated Device Technology, Inc. Air Cost Control INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Techn...
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CAT28F002 CAT28F002PI-90BT CAT28F002NI-90BT CAT28F |
90ns 2M-bit CMOS boot block flash memory 150ns 2M-bit CMOS boot block flash memory 120ns 2M-bit CMOS boot block flash memory 2 Megabit CMOS Boot Block Flash Memory High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
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http:// CATALYST[Catalyst Semiconductor]
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CAT1026LI-45-GT3 CAT1026LI-45T3 CAT25C04LI-1.8TE13 |
Dual Voltage Supervisory Circuits with I2C Serial 2k-bit CMOS EEPROM 1K/2K/4K SPI Serial CMOS EEPROM 16K-Bit CMOS PARALLEL EEPROM 64K-Bit CMOS PARALLEL EEPROM 512K-Bit CMOS Flash Memory 32K/64K-Bit SPI Serial CMOS EEPROM 1 Megabit CMOS Flash Memory 512K-Bit CMOS PARALLEL EEPROM 1 Megabit CMOS Boot Block Flash Memory 256K-Bit CMOS PARALLEL EEPROM Supervisory Circuits with I2C Serial CMOS EEPROM, Precision Reset Controller and Watchdog Timer Precision, Adjustable Shunt Regulator Supervisory Circuits with I2C Serial Serial CMOS EEPROM, Precision Reset Controller and Watchdog Timer 128K/256K-Bit SPI Serial CMOS EEPROM 16K-Bit Serial EEPROM, Cascadable
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CATALYST[Catalyst Semiconductor]
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AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix) High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28 High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
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ETC[ETC] ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp. Alliance Semiconductor ...
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TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位)的CMOS闪存 32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY 32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
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Toshiba, Corp. Toshiba Corporation
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