Part Number Hot Search : 
4739A GBU10 AON7422 C3200 ST1353 F45H11G DS1250BL C1710HO
Product Description
Full Text Search

MMDF4207 - TMOS Dual P-Channel Field Effect Transistors From old datasheet system Medium Power Surface Mount Products

MMDF4207_316489.PDF Datasheet

 
Part No. MMDF4207 ON2189 MMDF4207-D
Description TMOS Dual P-Channel Field Effect Transistors
From old datasheet system
Medium Power Surface Mount Products

File Size 192.08K  /  12 Page  

Maker


ON Semiconductor



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: MMDF4N01HD
Maker: MOTOROLA(摩托罗拉)
Pack: SOP8
Stock: 2112
Unit price for :
    50: $1.62
  100: $1.54
1000: $1.46

Email: oulindz@gmail.com

Contact us

Homepage http://www.onsemi.com
Download [ ]
[ MMDF4207 ON2189 MMDF4207-D Datasheet PDF Downlaod from Datasheet.HK ]
[MMDF4207 ON2189 MMDF4207-D Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for MMDF4207 ]

[ Price & Availability of MMDF4207 by FindChips.com ]

 Full text search : TMOS Dual P-Channel Field Effect Transistors From old datasheet system Medium Power Surface Mount Products


 Related Part Number
PART Description Maker
MMDF3NO2HD MMDF3N02HDR2 TMOS DUAL N-CHANNEL FIELD EFFECT TRANSISTOR
MOTOROLA[Motorola, Inc]
MTP1N100E_D ON2558 MTP1N100E MTP1N100E-D TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM
ON Semiconductor
Motorola, Inc
MTD20N06V MTD20N06 MTD20N06V_D ON2486 MTD20N06V-D TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培RDS(on)\u003d 0.080欧姆
From old datasheet system
TMOS V Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
MTP9N25E MTP9N25 MTP9N25E-D TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
IRF830-D Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS
ON Semiconductor
MTM60N06 MTM55N10 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
MOTOROLA[Motorola, Inc]
MTD3055EL TMOS IV Power Field Effect Transistor(N-Channel Enhancement-Mode Silicon Gate)
Motorola, Inc.
MTP6N60E-D TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
ON Semiconductor
MTD3055E MTD3055E1 TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount
Motorola, Inc
MTM60N06 MTM55N10 (MTM55N10 / MTM60N06) N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
Motorola
 
 Related keyword From Full Text Search System
MMDF4207 stmicroelectronics MMDF4207 receiver MMDF4207 Regulator MMDF4207 npn transistor MMDF4207 Amplifiers
MMDF4207 noise MMDF4207 Transistor MMDF4207 Interrupt MMDF4207 Module MMDF4207 toshiba
 

 

Price & Availability of MMDF4207

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.22105288505554