| PART |
Description |
Maker |
| 2SC332507 2SC3325 2SC3325-YTE85LF |
500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications
|
Toshiba Semiconductor
|
| HN1B01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| 2SC466607 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC2458 2SC245803 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications
|
Toshiba Semiconductor
|
| HN1B04FU E001969 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC3324 E000828 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC4116 E000906 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC4738 E000984 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| 2SC4944 2SC494407 |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplefier Applications
|
Toshiba Semiconductor
|
| 2SC4944 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplefier Applications
|
TOSHIBA
|
