PART |
Description |
Maker |
LC322271J LC322271T-70 LC322271T-80 LC322271M |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Write 2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
SANYO[Sanyo Semicon Device]
|
LC374100SM LC374100ST |
4 MEG (524288 words x 8 bits) Mask ROM Internal Clocked Silicon Gate
|
SANYO[Sanyo Semicon Device]
|
LC361000AMLL LC361000ARLL-10 LC361000ARLL-70 LC361 |
1 MEG (131072 words X 8 bits) SRAM 1迈可31072字8位)的SRAM 128K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Sanyo Electric Co., Ltd. Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
IS42S16400D-7BL IS42S16400D-7BLI IS42S16400D-7T IS |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
IS42S16400B-7T IS42S16400B-6T |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
IS45S16400E |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution
|
IS42S16400C1-7T IS42S16400C1-7TI IS42S16400C1-7TLI |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
IS42S16400B1-7T |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
http:// Integrated Silicon Solution, Inc.
|
EDX5116ABSE-4C-E EDX5116ABSE EDX5116ABSE-2A-E EDX5 |
512M bits XDR DRAM (32M words x16 bits)
|
ELPIDA[Elpida Memory]
|
EDD2508AKTA-5C EDD2508AKTA-5 EDD2508AKTA-5B |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
ELPIDA[Elpida Memory]
|
EDL5132CBMA-10-E |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
Elpida Memory, Inc.
|