| PART |
Description |
Maker |
| IDT5T9050PGI IDT5T9050 |
2.5V SINGLE DATA RATE 1:5 CLOCK BUFFER TERABUFFERJR 2.5V的单数据传输速率1:5时钟缓冲器TERABUFFER⑩JR
2.5V SINGLE DATA RATE 1:5 CLOCK BUFFER TERABUFFER⑩ JR
2.5V Single Data Rate 1:5 Clock Buffer Terabuffer Jr.
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| IS45S16160C-7TLA1 IS45S16160C-75TLA1 IS45S83200C |
256 Mb Single Data Rate Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| IDT5T9050PGGI IDT5T9050PGGI8 IDT5T9050PGI8 |
2.5V Single Data Rate 1:5 Clock Buffer TeraBuffer Jr.
|
IDT
|
| K4D623238B-GQC |
512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet
|
Samsung Electronic
|
| M2V64S50ETP-I |
64M Single Data Rate Synchronous DRAM WTR (Wide Temperature Range)
|
Elpida Memory
|
| 6SVP47M OS02N-DFSVP012 |
From old datasheet system
OS-CON DATA SHEET 操作系统节能的数据资
|
Sanyo Semicon Device
Sanyo Electric Co.,Ltd.
Sanyo Electric Co., Ltd.
|
| W9751G6KB-18 W9751G6KB-25 W9751G6KB-3 W9751G6KB25A |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| W9725G6JB25I |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| M13S2561616A-2S |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| M14D5121632A-2K |
Internal pipelined double-data-rate architecture; two data access per clock cycle
|
Elite Semiconductor Mem...
|
| K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
