| PART |
Description |
Maker |
| IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| IRGP30B120KD-E |
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
|
International Rectifier
|
| IRG7PH30K10D IRG7PH30K10DPBF |
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
|
International Rectifier
|
| IRG4PH40UD-E |
Leaded 1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
|
International Rectifier
|
| GA200TD120U |
1200V UltraFast 10-30 kHz Half-Bridge IGBT in a Dual INT-A-Pak package
|
International Rectifier
|
| IRGPS40B120UD |
1200V UltraFast 5-40 kHz Copack IGBT in a TO-274AA package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| IRGPS40B12 IRGPS40B120U |
1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package
INSULATED GATE BIPOLAR TRANSISTOR 绝缘栅双极晶体管
|
IR
http://
International Rectifier, Corp.
|
| RURG30120 FN3399 |
30A, 1200V Ultrafast Diode(30A, 1200V 超快速二极管) 30 A, 1200 V, SILICON, RECTIFIER DIODE, TO-247
30A/ 1200V Ultrafast Diode
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRG4PSH71U IRG4PSH71UPBF |
99 A, 1200 V, N-CHANNEL IGBT
INSULATED GATE BIPOLAR TRANSISTOR
1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package
|
IRF[International Rectifier]
|
| IRGS8B60K IRGSL8B60K IRGB8B60K |
INSULATED GATE BIPOLAR TRANSISTOR
600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package
600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package
600V UltraFast 10-30 kHz Copack IGBT in a TO-220AB package
|
http://
IRF[International Rectifier]
|
| IRGB6B60K IRGS6B60K IRGSL6B60K |
600V UltraFast 10-30 kHz IGBT in a TO-220AB package
600V UltraFast 10-30 kHz IGBT in a D2-Pak package
600V UltraFast 10-30 kHz IGBT in a TO-262 package
|
International Rectifier
|
