PART |
Description |
Maker |
MTP60N06 MTP60N06HD MTP60N06HD_D ON2633 |
From old datasheet system TMOS POWER FET 60 AMPERES 50 VOLTS TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM
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MOTOROLA[Motorola, Inc] ON Semi
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MTB15N06V MTB15N06V_D ON2395 MTB15N06V-D |
TMOS V Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 15 AMPERES 60 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTP3N120E_D ON2600 MTP3N120E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 3.0 AMPERES 1200 VOLTS
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ON Semiconductor
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MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES 250 VOLTS
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
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ON Semiconductor MOTOROLA[Motorola, Inc] http://
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MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 800 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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MTB3N100E_D ON2419 MTB3N100E 3N100E MTB3N100E-D |
From old datasheet system TMOS POWER FET 3.0 AMPERES 1000 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
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Motorola, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
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MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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MOTOROLA[Motorola, Inc] Motorola, Inc. ON SEMICONDUCTOR
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MTB23P06V MTB23P06 |
TMOS POWER FET 23 AMPERES 60 VOLTS
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MOTOROLA[Motorola, Inc]
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MMFT3055V |
TMOS POWER FET 1.7 AMPERES 60 VOLTS
|
Motorola, Inc
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