| PART |
Description |
Maker |
| FDN361 FDN361AN |
N-Channel/ Logic Level/ PowerTrench
N-Channel, Logic Level, PowerTrenchビヌ
N-Channel, Logic Level, PowerTrenchΤΜ
|
Fairchild Semiconductor Corporation
|
| SUD25N06-45L |
N-Channel 60-V (D-S), 175C MOSFET, Logic Level
N-Channel Enhancement-Mode MOSFETs, Logic Level
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| PHU78NQ03LT PHP78NQ03LT |
N-channel TrenchMOS logic level FET
N-channel TrenchMOSTM logic level FET 75 A, 25 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| FDD5810 FDD581007 FDD5810-F085 |
N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhm
N-Channel Logic Level Trench㈢ MOSFET
N-Channel Logic Level Trench? MOSFET
|
Fairchild Semiconductor
|
| RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的，0.150 Ohm的N通道，逻辑层次，额定静电，功率MOSFET
2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET
63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET
From old datasheet system
|
Fairchild Semiconductor, Corp.
INTERSIL[Intersil Corporation]
|
| SUD23N06-31L |
TERMINAL IGBT模块
N-Channel 60-V (D-S), 175C MOSFET, Logic Level
N-Channel 60-V (D-S) 175C MOSFET, Logic Level
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| FDN5632NF085 |
N-Channel Logic Level PowerTrench? MOSFET 60V, 1.6A, 98mΩ
N-Channel Logic Level PowerTrench㈢ MOSFET 60V, 1.6A, 98mヘ
|
Fairchild Semiconductor
|
| PHK24NQ04LT |
TrenchMOS logic level FET 21200 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012
From old datasheet system
TrenchMOS (tm) logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PSMN010-55D |
N-channel logic level TrenchMOS(tm) transistor
N-channel logic level TrenchMOS TM transistor
N-channel logic level TrenchMOS transistor(N沟道逻辑电平 TrenchMOS晶体
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| BUK9614-55A BUK9514-55A |
Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 160V; Case Size: 35x25 mm; Packaging: Bulk
TrenchMOS logic level FET
TrenchMOS TM logic level FET
TrenchMOS(tm) logic level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
