| PART |
Description |
Maker |
| CG3310 ECG3323 ECG3312 |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 25A I(C) | TO-247VAR
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 8A I(C) | TO-247VAR
|
|
| MDA920A7 MDA920A2 MDA920A4 MDA920A6 MDA920A8 MDA92 |
Diode Switching 1.2KV 1.129KA 3-Pin
|
New Jersey Semiconductor
|
| CAS300M12BM2 |
1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module
|
Cree, Inc
|
| IRGC5B120UB |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
|
|
| DA6/1200 |
6.0A Iout, 1.2kV Vrrm General Purpose Silicon Rectifier
|
Eupec Power Semiconductors
|
| P8SG-247R2ZH52 P8SG-0505ZH52 P8SG-053R6ZH52 P8SG-1 |
Input voltage:5V, output voltage /-5V ( /-150mA), 5.2KV isolated 1.5W regulated dual output
5.2 KV ISOLATED 1.5 W REGULATED DUAL OUTPUT DIP24 5.2千伏隔震1.5糯稳压双输出DIP24
Input voltage:5V, output voltage /-3.6V ( /-200mA), 5.2KV isolated 1.5W regulated dual output
|
PEAK[PEAK electronics GmbH]
|
| GT8Q102SM |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 8A I(C) | TO-252VAR 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 8A条一（c）|52VAR
|
Panasonic Industrial Solutions
|
| IRKT430-20 |
THYRISTOR MODULE|SCR DOUBLER|2KV V(RRM)|430A I(T) 晶闸管模块|可控硅倍增| 2kV的五（无线资源管理）| 430A我（翻译
|
International Rectifier, Corp.
|
| GP400LSS12S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
ITT, Corp.
|
| CM10MD24H |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 20A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1.2KV五（巴西）国际消费电子展|甲一（c
|
ITT, Corp.
|
| 2MBI100J120 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一c
|
Samsung Semiconductor Co., Ltd.
|
