| PART |
Description |
Maker |
| BF1105R |
N-channel dual-gate MOS-FETs
|
Philips Semiconductors
|
| BF1109WR BF1109 BF1109R |
N-channel dual-gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF1109WR BF1109R BF1109 BF1109_R_WR_2 |
N-channel dual-gate MOS-FETs
From old datasheet system
|
Philips
|
| BF904 BF904R BF904_904R_5 |
N-channel dual gate MOS-FETs
From old datasheet system
|
NXP Semiconductors
Philips Semiconductors
|
| BF1100R BF1100 BF1100_1 BF1100-15 BF1100-2015 |
Dual-gate MOS-FETs
From old datasheet system
|
Quanzhou Jinmei Electro...
Philips
|
| BF1107 BF1107W BF1107_1107W_3 |
From old datasheet system
N-channel single gate MOS-FETs
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BF1100R BF1100 |
Dual-gate MOS-FETs
|
NXP Semiconductors
|
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| 2SK1374 |
Small-signal device - Small-signal FETs - MOS FETs
From old datasheet system
SMini3-G1
|
panasonic
|
| BF1206 |
Dual N-channel dual-gate MOS-FET
|
NXP Semiconductors
|
| 2SK0614 2SK614 |
Small-signal device - Small-signal FETs - MOS FETs
From old datasheet system
TO-92-A1
|
panasonic
|
