| PART |
Description |
Maker |
| HYB314171BJL-70 HYB314171BJL-60 HYB314171BJL-50 HY |
256k x 16 Bit FPM DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
256k x 16 Bit FPM DRAM 3.3 V 70 ns
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IC41C8513 IC41LV8513 IC41LV8513-60T IC41C8513-35K |
10:1 LVDS Serdes Transmitter 100 - 660Mbps 28-SSOP -40 to 85
10:1 LVDS Serdes Transmitter 100 - 660Mbps 32-QFN -40 to 85
512K x 8 bit Dynamic RAM with Fast Page Mode
DYNAMIC RAM, FPM DRAM
|
ICSI[Integrated Circuit Solution Inc]
|
| HYB314400BJ-60 HYB314400BJ-50 HYB314400BJ-50- |
1M x 4 Bit FPM DRAM 3.3 V 60 ns
-1M x 4-Bit Dynamic RAM
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB514171BJ-50 HYB514171BJ-50- HYB514171BJ-60 Q671 |
256k x 16 Bit FPM DRAM 5 V 60 ns
256k x 16 Bit FPM DRAM 5 V 50 ns
256k x 16-Bit Dynamic RAM
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| IC41C44054 IC41C44052 IC41LV44052 IC41LV44054 IC41 |
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; No. of Contacts:8; Connector Shell Size:12; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
4Mx4 bit Dynamic RAM with Fast Page Mode 4Mx4位动态RAM的快速页面模
DYNAMIC RAM, FPM DRAM
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
|
| HYB3164165BT-40 HYB3165165BT-40 HYB3166165BT-40 HY |
4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 60 ns, PDSO50
INDUCTOR CHIP .10UH 5% 0805 SMD 4M X 16 EDO DRAM, 60 ns, PDSO50
4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 40 ns, PDSO50
|
http://
SIEMENS A G
SIEMENS AG
|
| HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24
4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO))
4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO))
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG
http://
Siemens Semiconductor Group
|
| HYB3117805BSJ-50 HYB3117805BSJ-60 HYB5117805BSJ-60 |
2M x 8 Bit 2k 5 V 60 ns EDO DRAM
2M x 8 Bit 2k 3.3 V 60 ns EDO DRAM
-2M x 8 - Bit Dynamic RAM 2k Refresh
2M x 8-Bit Dynamic RAM 2k Refresh (Hyper Page Mode-EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| VG2618160CJ-5 |
DRAM Chip, FPM DRAM, 2MByte, 5V Supply, Commercial, SOJ, 42-Pin
|
Vanguard International Semiconductor
|
