| PART |
Description |
Maker |
| IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100
25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
|
Integrated Device Technology, Inc.
IDT
|
| K7A403200M-16 K7A403200M K7A403200M-10 K7A403200M- |
128K x 32-Bit Synchronous Pipelined Burst SRAM Rev. 5.0 (DEC. 1999)
128Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| CY7C1303AV18-167BZC CY7C1306AV18-167BZC CY7C1303AV |
18-Mb Burst of 2 Pipelined SRAM with QDR(TM) Architecture
18-Mb Burst of 2 Pipelined SRAM with QDR Architecture
18-Mb Burst of 2 Pipelined SRAM with QDR垄芒 Architecture
|
Cypress Semiconductor
|
| IDT71P73204 IDT71P73204167BQ IDT71P73804 IDT71P738 |
18Mb Pipelined DDR垄芒II SRAM Burst of 4
18Mb Pipelined DDR?⑸I SRAM Burst of 4
18Mb Pipelined DDR?II SRAM Burst of 4
|
Integrated Device Technology
Integrated Device Techn...
|
| K7A803609A K7A801809A |
256Kx36Bit Synchronous Pipelined Burst SRAM Data Sheet
512Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
Samsung Electronic
|
| AS7C25512PFD32_36A AS7C25512PFD32A AS7C25512PFD32A |
2.5V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.8 ns, PQFP100
2.5V 512K x 32/36 pipelined burst synchronous SRAM 2.5V的为512k × 32/36管线爆裂同步SRAM
2.5V 512K x 32/36 pipelined burst synchronous SRAM 512K X 32 STANDARD SRAM, 3.5 ns, PQFP100
Sync SRAM - 2.5V
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor Corp...
|
| K7A803601M K7A801801M K7A801809B K7A803609B |
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| AS7C252MPFS18A AS7C252MPFS18A_V1.3 AS7C252MPFS18A- |
Sync SRAM - 2.5V
From old datasheet system
2.5V 2M x 18 pipelined burst synchronous SRAM 2M X 18 STANDARD SRAM, 3.1 ns, PQFP100
2.5V 2M x 18 pipelined burst synchronous SRAM 2M X 18 STANDARD SRAM, 3.8 ns, PQFP100
|
Alliance Semiconductor ...
ALSC
Alliance Semiconductor Corporation
Alliance Semiconductor, Corp.
INTEGRATED SILICON SOLUTION INC
|
| BBS-15 BBS-1/4 BBS-2/10 BBS-1-8/10 BBS-10 BBS-1-6/ |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
72-Mbit DDR-II SRAM 2-Word Burst Architecture
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL™ Architecture
36-Mbit QDR™-II SRAM 4-Word Burst Architecture
Fuse
256K (32K x 8) Static RAM
64/256/512/1K/2K/4K x 18 Synchronous FIFOs
Low-Voltage 64/256/512/1K/2K/4K/8K x 9 Synchronous FIFOs
Neuron® Chip Network Processor
64-Kbit (8K x 8) Static RAM
72-Mbit QDR™-II SRAM 2-Word Burst Architecture 保险
|
NXP Semiconductors N.V.
|
| MC8051M36 |
SYMMETRIC PIPELINED BURST SRAM
|
Electronic Theatre Controls, Inc.
|
| IDT71P72804S250BQ IDT71P72104 IDT71P72104S167BQ ID |
18Mb Pipelined QDRII SRAM Burst of 2
|
IDT[Integrated Device Technology]
|
