| PART |
Description |
Maker |
| MTP1N60E_D ON2561 |
TMOS POWER FET 1.0 AMPERES 600 VOLTS
From old datasheet system
|
ON Semi
|
| MTW8N60E_D ON2705 |
TMOS POWER FET 8.0 AMPERES 600 VOLTS
From old datasheet system
|
ON Semi
|
| MTB9N25E MTB9N25E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 9.0 AMPERES 250 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTW8N60E |
N?Channel Power MOSFET
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
|
ON Semiconductor
|
| MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTP3N120E_D ON2600 MTP3N120E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
|
ON Semiconductor
|
| MTP33N10E_D MTP33N10 ON2594 MTP33N10E MTP33N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
Motorola, Inc.
|
| MTV10N100E_D ON2669 MTV10N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 10 AMPERES 1000 VOLTS
|
ON Semiconductor
|
| MTV32N20E MTV32N20E_D ON2673 MTV32N20E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(ON) = 0.075 OHM
From old datasheet system
|
ON Semiconductor
ETC
Motorola, Inc
|
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| MTSF1P02HD ON2655 |
SINGLE TMOS POWER MOSFET
SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHM
From old datasheet system
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
