| PART |
Description |
Maker |
| K4H560838E K4H560838E-TC_LB3 K4H560438E-TC_LA2 K4H |
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4T56043QFNBSP K4T56083QFNBSP K4T56083QF K4T56083Q |
256Mb F-die DDR2 SDRAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4H560438J-LC/LB0 K4H560438J-LC/LB3 K4H560838J-LC/ |
256Mb J-die DDR SDRAM Specification
|
Samsung semiconductor
|
| K4H560838D-TCC4 K4H560838D-TCCC K4H561638D-TCCC K4 |
256Mb D-die DDR400 SDRAM Specification 256Mb芯片支持DDR400内存规格
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4H560838E-NLB3 K4H560438E-NC K4H560438E-NC_LA2 K4 |
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
|
SAMSUNG[Samsung semiconductor]
|
| K4H560838F K4H561638F-UCCC K4H561638F-UCC4 K4H5608 |
256Mb F-die DDR400 SDRAM Specification 256Mb的的F -模具支持DDR400内存规格
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4H560438E-NC/LA2 K4H560838E-NC/LA2 K4H560438E-NC/ |
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP（二
DIODE ZENER SINGLE 300mW 43Vz 5mA-Izt 0.02 0.05uA-Ir 33 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP（二
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP 0 to 70
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC -40 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-SOIC
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY57V56820BT HY57V56820BLT-S HY57V56820BT-S HY57V5 |
32Mx8|3.3V|8K|K|SDR SDRAM - 256M
SDRAM|4X8MX8|CMOS|TSOP|54PIN|PLASTIC
4 Banks X 8M X 8Bit Synchronous DRAM
SDRAM - 256Mb
|
Hynix Semiconductor
|
| HYB39S256400D HYB39S256400DTL-6 HYB39S256400DTL-7 |
256 MBit Synchronous DRAM
SDRAM Components - 256Mb (16Mx16) FBGA PC133 2-2-2
SDRAM Components - 256Mb (32Mx8) PC133 2-2-2
SDRAM Components - 256Mb (32Mx8) FBGA PC133 2-2-2
SDRAM Components - 256Mb (16Mx16) PC133 2-2-2
SDRAM Components - 256Mb (64Mx4) FBGA PC133 2-2-2
256-MBit Synchronous DRAM
|
INFINEON[Infineon Technologies AG]
|
| K5D5657ACM K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S561632J-UC_L50 K4S561632J-UC_L75 K4S561632J-UC_ |
256Mb J-die SDRAM Specification
16M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Samsung semiconductor
|
| HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000G |
DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
