| PART |
Description |
Maker |
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| LD242 LD242-2 LD242-3 LD242E7800 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
| LD271 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Semiconductor Group
|
| SFH4211 |
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
|
OSRAM GmbH
|
| SFH405 SFH40512 Q62702P0835 |
GaAs-IR-Lumineszenzdiode
|
OSRAM GmbH
|
| MA4EX1201-1300 MA4EX1201-1300T |
GaAs MMIC Double Balanced 11-15 GHz Mixer GaAs MMIC双平衡混频器11-15千兆
|
Lattice Semiconductor, Corp.
GSI Technology, Inc.
|
| CMY91 Q62702-M9 |
GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication) 砷化镓微波单片集成电路（砷化镓混频器，集成中频放大器的移动通信
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| OH004 OH10004OH004 |
GaAs device - GaAs Hall Devices
|
Matsshita / Panasonic
|
| CFH2162-P1 CFH2162-P109 |
800 to 900 MHz 36 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
| CFK2062-P1 |
800 to 900 MHz 30 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
| PD-8351-X PD-8350-F PD-8351-S PD-8350-X PD-8350-T |
Mini-Size GaAs PIN PD MODULE GaAs PIN PHOTODIODE WITH SINGLE-MODE FIBER PIGTAIL 迷你尺寸GaAs PIN型帕金森模块砷化镓PIN光电二极管与单模光纤尾纤
|
Optoway Technology Inc.
Optoway Technology, Inc.
|
| CF739 Q62702-F1215 |
From old datasheet system
GaAs FET (N-channel dual-gate GaAs MES FET)
|
Siemens Semiconductor G...
Siemens Semiconductor Group
Infineon
SIEMENS AG
|
