| PART |
Description |
Maker |
| TC55V4000ST-70 TC55V4000ST-85 |
512K Word x 8 Bit CMOS Static RAM(512K字x 8 CMOS 静RAM)
|
Toshiba Corporation
|
| IDT7MB4048S35P IDT7MB4048S25P IDT7MB4048 IDT7MB404 |
512K x 8 CMOS STATIC RAM MODULE
|
IDT[Integrated Device Technology]
|
| KM68U4000C |
512K x8 bit Low Power and Low Voltage CMOS Static RAM(512K x8位低功耗低电压CMOS 静RAM) 12k x8位低功耗和低电压的CMOS静态RAM（为512k x8位低功耗低电压的CMOS静态RAM）的
|
Samsung Semiconductor Co., Ltd.
|
| K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44
From old datasheet system
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS61C5128AL IS61C5128AL-10KI IS61C5128AL-10KLI IS6 |
512K x 8 HIGH-SPEED CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
Integrated Silicon Solu...
|
| IS61LV5128-15BI IS61LV5128-15K IS61LV5128-15KI IS6 |
512K x 8 HIGH-SPEED CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| LH5P1632 LH5P1632N-80 |
CMOS 512K(32K x 16)pseudo-static RAM
CMOS 512K (32K x 16) Pseudo-Static RAM
|
Sharp Electrionic Components
|
| IS61C5128 |
512K x 8 High Speed CMOS Static RAM
|
Integrated Silicon Solution
|
| IDT71V424 IDT71V424S12Y IDT71V424S15Y IDT71V424S20 |
3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT)
|
Integrated Device Technology
|
| LH5P860 LH5P860D-80 LH5P860N-80 |
CMOS 512K (64K x 8) Pseudo-Static RAM
|
Sharp Electrionic Components
|
| IS61WV51216BLL IS61WV51216BLL-10MLI IS61WV51216BLL |
512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
|
Integrated Silicon Solution, Inc
|
| CYK512K16SCAU-55BAXI CYK512K16SCAU-70BAXI CYK512K1 |
512K X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, LEAD FREE, MO-207, FBGA-48
512K X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, MO-207, FBGA-48
512K X 16 PSEUDO STATIC RAM, 55 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, MO-207, FBGA-48
8-Mbit (512K x 16) Pseudo Static RAM
|
Cypress Semiconductor, Corp.
|
