PART |
Description |
Maker |
2SC4245 E000921 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS From old datasheet system TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS
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TOSHIBA[Toshiba Semiconductor]
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2SC3120 E000792 SC3120 |
TRANSISTOR (TV TUNER/ UHF MIXER/ VHF~UHF BAND RF AMPLIFIER APPLICATIONS) TRANSISTOR (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS) TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS From old datasheet system
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TOSHIBA[Toshiba Semiconductor]
|
MT6C04AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
MGF7169C |
UHF BAND GaAs POWER AMPLIFIER
|
Mitsubishi Electric Corporation
|
MGF7114C |
UHF BAND GaAs POWER AMPLIFIER
|
Mitsubishi
|
2SC2643 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
2SC2783 |
TRANSISTOR (UHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
MGF7168C 7168CT_N |
UHF BAND GaAs POWER AMPLIFIER From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
AMFW-7S-122128-100P2 AMFW-7S-117128-65B AMFW-5S-12 |
8000 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 3700 MHz - 4200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 7250 MHz - 7750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 9600 MHz - 9800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 12200 MHz - 12750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 11700 MHz - 12750 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 12200 MHz - 12750 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 7200 MHz - 7800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 11400 MHz - 12200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
2SK3075 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF .AND UHF .BAND POWER AMPLIFIER
|
TOSHIBA
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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NXP Semiconductors Quanzhou Jinmei Electro...
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