| PART |
Description |
Maker |
| MB8502D064AA-70 MB8502D064AA-60 |
CMOS 2M×64 BIT
Hyper Page Mode DRAM Module(CMOS 2M×64 位超级页面存取模式动态RAM模块)
CMOS 2M?64 BIT Hyper Page Mode DRAM Module(CMOS 2M?64 浣??绾ч〉?㈠???ā寮????AM妯″?)
|
Fujitsu Limited
|
| HYM536410A |
4M x 36-Bit CMOS DRAM Module
|
Hyundai
|
| HYM536A410A |
4M x 36-Bit CMOS DRAM Module
|
Hyundai
|
| HYM536A810A |
8M x 36-Bit CMOS DRAM Module
|
Hyundai
|
| HYM536810A |
8M x 36-Bit CMOS DRAM Module
|
Hyundai
|
| HYM328000GD-60 HYM328000GD- 328000 HYM328000GD-50 |
-8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
8M x 32 Bit DRAM Module (SO-DIMM)
From old datasheet system
8M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE 8M X 32 FAST PAGE DRAM MODULE, 60 ns, ZMA72
|
Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| HYM324020GS-60 HYM324020GS-50 HYM324020S-60 HYM324 |
4M x 32-Bit Dynamic RAM Module 4米32位动态随机存储器模块
4M x 32-Bit Dynamic RAM Module 4M X 32 FAST PAGE DRAM MODULE, 60 ns, SMA72
4M x 32 Bit DRAM Module
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| KMM594000-10 KMM594000-8 KMM594000 |
4M x 9 CMOS DRAM Memory Module 4米9的CMOS DRAM记忆体模
4M x 9 CMOS DRAM SIMM Memory Module
|
Samsung Semiconductor Co., Ltd.
Samsung Electronics
|
| HYM324020GL-60 HYM324020GL-50 HYM324020GD-60 HYM32 |
4M x 32 -Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE
4M x 32 Bit DRAM Module (SO-DIMM)
|
Infineon
|
| HYM324025GS-60 HYM324025GS-50 HYM324025S-60 HYM324 |
4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 60 ns, SMA72
4M x 32-Bit EDO-DRAM Module 4米32位江户记忆体模组
4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 50 ns, SMA72
4M x 32 Bit EDO DRAM Module
|
INFINEON TECHNOLOGIES AG
SIEMENS A G
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HYM724000GS-50- Q67100-Q2076 Q67100-Q2075 HYM72400 |
4M x 72 Bit ECC DRAM Module buffered
4M x 72-Bit Dynamic RAM Module (ECC - Module )
4M x 72-Bit Dynamic RAM Module 4M X 72 FAST PAGE DRAM MODULE, 50 ns, DMA168
4M x 72-Bit Dynamic RAM Module 4M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| KM416C1204CJ-L5 KM416V1004CJ-L5 KM416C1004CJ-L45 K |
5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
3.3V, 1M x 16 bit CMOS DRAM with extended data out, 50ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns
5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns
|
Samsung Electronic
|
