| PART |
Description |
Maker |
| 2SC4691J |
Small-signal device - Small-signal transistor - High-Speed SwitchVCO and High Freq.
|
Panasonic
|
| 2SC5829 |
Small-signal device - Small-signal transistor - High-Speed SwitchVCO and High Freq.
|
Panasonic
|
| 2SC3739 2SC3739-T2B 2SC3739-L |
HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Silicon transistor
|
http://
NEC
|
| 2SA1463-T2 2SA1463-T1 2SA1463 |
Silicon transistor
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC
|
| 2SA1612-T2 2SA1612-T1 2SA1612 |
Silicon transistor
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR
|
NEC
|
| 2N4347 2N3442 |
High voltage silicon N-P-N transistor. 140V, 100W.
High voltage silicon N-P-N transistor. 160V, 117W.
|
General Electric Solid State
|
| 2SA1741 |
Silicon powor transistor
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
NEC
|
| 2SA1647-Z 2SA1647-15 |
SILICON POWER TRANSISTOR
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
|
Renesas Electronics Corporation
|
| 2SC5177 2SC5177-T1 2SC5177-T2 |
High fT, high gain transistor
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
NEC
|
| 2SD1592 2SD1592L |
Silicon transistor
NPN SILICON TRIPLE DIFFUSED TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-VOLTAGE LOW-SPEED SWITCHING
TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 5A I(C) | SOT-186
|
NEC Corp.
|
