| PART |
Description |
Maker |
| PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET
From old datasheet system
mTrenchMOS extremely low level FET
|
Philips
|
| SF20SC6 |
Schottky Rectifiers (SBD) / Center Tap, Common Cathode (Three Terminal Type)
SCHOTTKY RECTIFIERS (SBD) 肖特基二极管（SBD智能交通）
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| PMGD370XN |
Dual N-channel uTrenchmos (tm) extremely low level FET
Dual N-channel mTrenchMOS-TM extremely low level FET
|
Philips Semiconductors
|
| PMWD20XN |
Dual N-channel microTrenchMOS(tm) extremely low level FET
DUAL N-CHANNEL UTRENCHMOS EXTREMELY LOW LEVEL FET
|
NXP Semiconductors
Philips Semiconductors
|
| SF20H1R5 |
Schottky Rectifiers (SBD) / Single (Two Terminal Type)
Schottky Rectifiers(SBD)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| 1SS390 |
Extremely Small surface mounting type. (EMD2) High reliability.
|
TY Semiconductor Co., L...
|
| KCQ30A04 |
SBD Type : KCQ30A04
|
N.A.
|
| STD15N60M2-EP |
Extremely low gate charge
|
STMicroelectronics
|
| MBD110DWT1 |
Extremely Low Minority Carrier Lifetime
|
TY Semiconductor Co., Ltd
|
| LPW-351202F LPW-351202J LPW-351202K LPW-1051202F L |
Extremely Low Resistance Power Wirewounds
|
IRC - a TT electronics Company.
|
| AP2129 |
EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
BCD
|
| DN100S |
Extremely low collector-to-emitter saturation voltage
|
KODENSHI KOREA CORP.
|
