| PART |
Description |
Maker |
| STW5NA100 5367 STH5NA100FI STH5NA100 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORS
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
From old datasheet system
N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管（不适用沟道增强模式快速功率马鞍山晶体管）
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| 2N6781 2N6782 |
100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET
60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET
N-CHANNEL ENHANCEMENT-MODE D-MOS PWER FETS
|
Topaz Semiconductor
List of Unclassifed Manufacturers
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| STW12NA60 STH12NA60_FI 3561 STH12NA60 STH12NA60FI |
From old datasheet system
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin
N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET)
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| STP2N60FI STP2N60 3137 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管（不适用沟道增强模式功率MOSFET的）
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STP33N10FI STP33N10 3141 |
N-Channel Enhancement Mode Power MOS Transistor(N娌??澧?己妯″????MOSFET)
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system
|
STMICROELECTRONICS[STMicroelectronics]
|
| STB5NA80 4891 |
N-Channel Enhancement Mode Power MOS Transistor(Ｎ沟道增强模式功率ＭＯＳ晶体
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| MTP6N60 3038 -MTP6N60 |
N-Channel Enhancement Mode Power MOS Transistor(N娌??澧?己妯″????MOSFET)
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STW80N06-10 4868 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| APT10021JFLL |
POWER MOS 7 1000V 37A 0.210 Ohm
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7 is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
| STP80N06-1 STP80N06-10 4888 |
From old datasheet system
N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR
N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
