| PART |
Description |
Maker |
| HYE25L256160AC-7.5 |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3 Ext. Temp.
|
Infineon
|
| HYE18P16161ACL85 HYE18P16161AC HYE18P16161AC-70 HY |
Specialty DRAMs - 1Mx16, VFBGA-48; Available 2Q04
Specialty DRAMs - 1Mx16, VGBGA-48; Available 2Q04
16M Asynchronous/Page CellularRAM
|
INFINEON[Infineon Technologies AG]
|
| HY5DU561622FTP-4 HY5DU561622FTP-5 HY5DU561622FLTP- |
256M(16Mx16) DDR SDRAM
|
Hynix Semiconductor
|
| HY5DU561622FTP-4I HY5DU561622FTP-5I HY5DU561622FLT |
256M(16Mx16) DDR SDRAM
|
Hynix Semiconductor
|
| HYB25L128160AC-7.5 HYE25L128160AC-7.5 |
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3
Specialty DRAMs - 128M (8Mx16) 133MHz 3-3-3 Ext. Temp
|
Infineon
|
| HM5425801B |
256M SSTL_2 interface DDR SDRAM(256M SSTL_2接口 DDR 同步DRAM) 256M DDR SDRAM的接口SSTL_256M SSTL_2接口的DDR同步DRAM）的
|
Hitachi,Ltd.
|
| MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184
TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
16Mx16显示）2/8/16）件RIMM的模块，基于256Mb阿芯片，32秒银行，16K/32ms参考，.5V
(MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die
(16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| IS43DR83200A IS43DR16160A-37CBL IS43DR16160A-37CBL |
32Mx8, 16Mx16 DDR2 DRAM
|
Integrated Silicon Solution, Inc
|
| M464S0924CT2 M464S1724CT2 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Datasheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| M368L1624BT1 |
8Mx64 DDR SDRAM 184pin DIMM based on 16Mx16 Data Sheet
|
Samsung Electronic
|
